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Fully understanding the properties of n-type ferromagnetic semiconductors(FMSs), complementary to the mainstream p-type ones, is a challenging goal insemiconductor spintronics because ferromagnetism in n-type FMSs istheoretically non-trivial. Soft-x-ray angle-resolved photoemission spectroscopy(SX-ARPES) is a powerful approach to examine the mechanism of carrier-inducedferromagnetism in FMSs. Here our SX-ARPES study on the prototypical n-type FMS(In,Fe)As reveals the entire band structure including the Fe-3d impurity bands(IBs) and the host InAs ones, and provides direct evidence for electronoccupation of the InAs-derived conduction band (CB). A minority-spin Fe-3d IBis found to be located just below the conduction-band minimum (CBM). The IB isformed by the hybridization of the unoccupied Fe-3d states with the occupiedCBM of InAs in a spin-dependent way, resulting in the large spin polarizationof CB. The band structure with the IB is varied with band filling, which cannotbe explained by the rigid-band picture, suggesting a unified picture forrealization of carrier-induced ferromagnetism in FMS materials.

Minority-Spin Impurity Band in n-Type (In,Fe)As: A Materials Perspective for Ferromagnetic Semiconductors