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Two-dimensional (2D) magnetoelectric multiferroics are promisingmultifunctional materials for miniaturized logic and memory devices. Herein, weexplore the effectiveness of strain-engineering for tuning the properties of arecently predicted 2D antiferromagnetic-ferroelectric, VOCl2 monolayer.Interestingly, we find that magnetic-ordering and electric polarization can betuned independently using uniaxial tensile strain along different in-planelattice vectors. A 4% tensile strain along lattice vector b induces atransition from an antiferromagnetic (AFM) ground state with an out-of-planemagnetization to a ferromagnetic (FM) ground state with in-plane magnetization.On the other hand, tensile strain along lattice vector a enhances spontaneouselectric polarization, without affecting the magnetic ordering. The monolayersremain dynamically stable under tensile strain, which further helps to raisethe Curie temperature of ferromagnetism, as well as ferroelectricity. Such astrain-tunable multiferroic material holds great promises for future generationnanoelectronic devices.

Decoupled Strain Response of Ferroic Properties in Multiferroic VOCl2 Monolayer