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We study the tunnel magnetoresistance (TMR) effect and magnetocrystallineanisotropy in a series of magnetic tunnel junctions (MTJs) with $L1_1$-orderedfcc ferromagnetic alloys and MgO barrier along the [111] direction. Consideringthe (111)-oriented MTJs with different $L1_1$ alloys, we calculate their TMRratios and magnetocrystalline anisotropies on the basis of the first-principlescalculations. The analysis shows that the MTJs with Co-based alloys (CoNi,CoPt, and CoPd) have high TMR ratios over 2000$\%$. These MTJs haveenergetically favored Co-O interfaces where interfacial antibonding between Co$d$ and O $p$ states is formed around the Fermi level. We find that theresonant tunneling of the antibonding states, called the interface resonanttunneling, is the origin of the obtained high TMR ratios. Our calculation ofthe magnetocrystalline anisotropy shows that many $L1_1$ alloys have largeperpendicular magnetic anisotropy (PMA). In particular, CoPt has the largestvalue of anisotropy energy $K_{\rm u} \approx 10\,{\rm MJ/m^3}$. We furtherconduct a perturbation analysis of the PMA with respect to the spin-orbitinteraction and reveal that the large PMA in CoPt and CoNi mainly originatesfrom spin-conserving perturbation processes around the Fermi level.

physical review. b./physical review. b

Interfacial giant tunnel magnetoresistance and bulk-induced large  perpendicular magnetic anisotropy in (111)-oriented junctions with fcc  ferromagnetic alloys: A first-principles study