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Transition metal (TM) defects in silicon carbide have favorable spincoherence properties and are suitable as quantum memory for quantumcommunication. To characterize TM defects as quantum spin-photon interfaces, wemodel defects that have one active electron with spin 1/2 in the atomic $D$shell. The spin structure, as well as the magnetic and optical resonanceproperties of the active electron emerge from the interplay of the crystalpotential and spin-orbit coupling and are described by a general model derivedusing group theory. We find that the spin-orbit coupling leads to additionalallowed transitions and a modification of the $g$-tensor. To describe thedependence of the Rabi frequency on the magnitude and direction of the staticand driving fields, we derive an effective Hamiltonian. This theoreticaldescription can also be instrumental to perform and optimize spin control in TMdefects.

Spin Structure and Resonant Driving of Spin-1/2 Defects in SiC