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TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spinreorientation transition (SRT) with temperature between 82 K and 94 K in singlecrystals. In this temperature region, the N\'eel vector continuously rotatesfrom the crystallographic $c$-axis (below 82 K) to the $a$-axis (above 94 K).The SRT allows for a temperature control of distinct antiferromagnetic stateswithout the need for a magnetic field, making it apt for applications workingat THz frequencies. For device applications, thin films of TFO are required aswell as an electrical technique for reading out the magnetic state. Here wedemonstrate that orthorhombic TFO thin films can be grown by pulsed laserdeposition and the detection of the SRT in TFO thin films can be accessed bymaking use of the all electrical spin Hall magnetoresistance (SMR), in goodagreement for the temperature range where the SRT occurs. Our resultsdemonstrate that one can electrically detect the SRT in insulators.

Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance