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We present a combined treatment of the non-equilibrium dynamics and transportof electrons and phonons by carrying out \textit{ab initio} calculations of thefully coupled electron and phonon Boltzmann transport equations. We find thatthe presence of mutual drag between the two carriers causes the thermopower tobe enhanced and dominated by the transport of phonons, rather than electrons asin the traditional semiconductor picture. Drag also strongly boosts theintrinsic electron mobility, thermal conductivity and the Lorenz number.Impurity scattering is seen to suppress the drag-enhancement of the thermal andelectrical conductivities, while having weak effects on the enhancement of theLorenz number and thermopower. We demonstrate these effects in \textit{n}-doped3C-SiC at room temperature, and explain their origins. This work establishesthe roles of microscopic scattering mechanisms in the emergence of strong drageffects in the transport of the interacting electron-phonon gas.

Electron-phonon drag enhancement of transport properties from fully coupled \textit{ab initio} Boltzmann formalism