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We report on theoretical and experimental study of the spin polarizationrecovery and Hanle effect for the charge carriers interacting with thefluctuating nuclear spins in the semiconductor structures. We start thetheoretical description from the simplest model of static and isotropic nuclearspin fluctuations. Then we describe the modification of the polarizationrecovery and Hanle curves due to the anisotropy of the hyperfine interaction,finite nuclear spin correlation time, and the strong pulsed spin excitation.For the latter case, we describe the resonance spin amplification effect in theFaraday geometry and discuss the manifestations of the quantum Zeno effect. Theset of the experimental results for various structures and experimentalconditions is chosen to highlight the specific effects predicted theoretically.We show that the spin polarization recovery is a very valuable tool foraddressing carrier spin dynamics in semiconductors and their nanostructures.

Spin polarization recovery and Hanle effect for charge carriers interacting with nuclear spins in semiconductors