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Normal incidence 1 keV Ar$^+$ ion bombardment leads to amorphization andultrasmoothing of Ge at room temperature, but at elevated temperatures the Gesurface remains crystalline and is unstable to the formation of self-organizednanoscale patterns of ordered pyramid-shaped pits. The physical phenomenondistinguishing the high temperature patterning from room temperatureultrasmoothing is believed to be a surface instability due to theEhrlich-Schwoebel barrier for diffusing vacancies and adatoms, which is notpresent on the amorphous material. This real-time GISAXS study comparessmoothing of a pre-patterned Ge sample at room temperature with patterning ofan initially flat Ge sample at an elevated temperature. In both experiments,when the nanoscale structures are relatively small in height, the averagekinetics can be explained by a linear theory. The linear theory coefficients,indicating surface stability or instability, were extracted for bothexperiments. A comparison between the two measurements allows estimation of thecontribution of the Ehrlich-Schwoebel barrier to the self-organized formationof ordered nanoscale patterns on crystalline Ge surfaces.

Measurement of Ehrlich-Schwoebel barrier contribution to the self-organized formation of ordered surface patterns on Ge(001)