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We performed calculations of the electronic band structure and the Fermisurface as well as measured the longitudinal resistivity rhoxx(T,H), Hallresistivity rhoxy(T,H) and quantum oscillations of the magnetization as afunction of temperature at various magnetic fields for MoO2 with monocliniccrystal structure. The band structure calculations show that MoO2 is anodal-line semimetal when spin-orbit coupling is ignored. It was found that alarge magnetoresistance reaching 5.03x10^4% at 2 K and 9 T, its nearlyquadratic field dependence and a field-induced up-turn behavior of rhoxx(T),the characteristics common for many topologically non-trivial as well astrivial semimetals, emerge also in MoO2. The observed properties are attributedto a perfect charge-carrier compensation, evidenced by both calculationsrelying on the Fermi surface topology and the Hall resistivity measurements.Both the observation of negative magnetoresistance for magnetic field along thecurrent direction and the non-zero Berry phase in de Haas-van Alphenmeasurements indicate that pairs of Weyl points appear in MoO2, which may bedue to the crystal symmetry breaking. These results highlight MoO2 as a newplatform materials for studying the topological properties of oxides.

Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2