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In-plane anisotropy of electrical resistivity was studied in samples of thehole-doped Ba$_{1-x}$K$_x$Fe$_2$As$_2$ in the composition range $0.21 \leq x\leq 0.26$ where anisotropy changes sign. Low-temperature ($\sim$20~K)irradiation with relativistic 2.5 MeV electrons was used to control the levelof disorder and residual resistivity of the samples. Modification of thestress-detwinning technique enabled measurements of the same samples before andafter irradiation, leading to conclusion of anisotropic character ofpredominantly inelastic scattering processes. Our main finding is that theresistivity anisotropy is of the same sign irrespective of residualresistivity, and remains the same in the orthorhombic $C_2$ phase above there-entrant tetragonal transition. Unusual $T$-linear dependence of theanisotropy $\Delta \rho \equiv \rho_a(T)-\rho_b(T)$ is found in pristinesamples with $x=$0.213 and $x=$0.219, without similar signatures in either$\rho_a(T)$ or $\rho_b(T)$. We show that this feature can be reproduced by aphenomenological model of R.~M.~Fernandes {\it et al.} Phys. Rev. Lett. {\bf107},217002 (2011). We speculate that onset of fluctuations of nematic order onapproaching the instability towards the re-entrant tetragonal phase contributesto this unusual dependence.

Effect of controlled point-like disorder induced by 2.5 MeV electron irradiation on nematic resistivity anisotropy of hole-doped (Ba,K)Fe$_2$As$_2$