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Energy dispersion and spin orientation of the protected states at interfacesbetween topological insulators (TIs) and non-topological materials depend onthe charge redistribution, strain, and atomic displacement at the interface.Knowledge of these properties is essential for applications of topologicalcompounds, but direct access to them in the interface geometry is difficult. Weshow that conductance of a gated double junction at the surface of atopological insulator exhibits oscillations and a quasi-linear decay as afunction of gate voltage in different regimes. These give the values for thequasiparticle velocities along and normal to the junction in the interfaceregion, and determine the symmetry of the topological interface states. Theresults are insensitive to the boundary conditions at the junction.

Conductance of gated junctions as a probe of topological interface states