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Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of thebandgap and the creation of site controlled quantum dots through themanipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom issurrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanningtunneling microscopy (X-STM) to study these complexes in the GaAs (110) surfaceat the atomic scale. In addition to that we performed density functional theory(DFT) calculations to determine the atomic properties of the N-nH complexes. Weargue that at or near the (110) GaAs surface two H atoms from N-nH complexesdissociate as an H$_2$ molecule. We observe multiple features related to thehydrogenation process, of which a subset is classified as N-1H complexes. TheseN-1H related features show an apparent reduction of the local density of states(LDOS), characteristic to N atoms in the GaAs (110) surface with an additionalapparent localized enhancement of the LDOS located in one of three crystaldirections. N-nH features can be manipulated with the STM tip. Showing in onecase a switching behavior between two mirror-symmetric states and in anothercase a removal of the localized enhancement of the LDOS. The disappearance ofthe bright contrast is most likely a signature of the removal of an H atom fromthe N-nH complex.

N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy