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We report the electronic properties of single crystals of candidatenodal-line semimetal CaAgP. The transport properties of CaAgP are understoodwithin the framework of a hole-doped nodal-line semimetal. In contrast,Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magneticfields and a strong decrease of electrical resistivity at low temperaturesprobably due to weak antilocalization. Hall conductivity data indicated thatthe Pd-doped CaAgP has not only hole carriers induced by the Pd doping, butalso high-mobility electron carriers in proximity of the Dirac point.Electrical resistivity of Pd-doped CaAgP also showed a superconductingtransition with onset temperature of 1.7-1.8 K.

High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP