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We describe a new approach to compute the electron-phonon self-energy andcarrier mobilities in semiconductors. Our implementation does not require alocalized basis set to interpolate the electron-phonon matrix elements, withthe advantage that computations can be easily automated. Scattering potentialsare interpolated on dense $\mathbf{q}$ meshes using Fourier transforms and abinitio models to describe the long-range potentials generated by dipoles andquadrupoles. To reduce significantly the computational cost, we take advantageof crystal symmetries and employ the linear tetrahedron method and double-gridintegration schemes, in conjunction with filtering techniques in the Brillouinzone. We report results for the electron mobility in Si, GaAs, and GaP obtainedwith this new methodology.

Phonon-limited electron mobility in Si, GaAs and GaP with exact treatment of dynamical quadrupoles