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In2O3 is an n-type transparent semiconducting oxide possessing a surfaceelectron accumulation layer (SEAL) like several other relevant semiconductors,such as InAs, InN, SnO2, and ZnO. Even though the SEAL is within the core ofthe application of In2O3 in conductometric gas sensors, a consistent set oftransport properties of this two-dimensional electron gas (2DEG) is missing inthe present literature. To this end, we investigate high qualitysingle-crystalline as well as textured doped and undoped In2O3(111) films grownby plasma-assisted molecular beam epitaxy to extract transport properties ofthe SEAL by means of Hall effect measurements at room temperature whilecontrolling the oxygen adsorbate coverage via illumination. The resulting sheetelectron concentration and mobility of the SEAL are 1.5E13 cm^-2 and 150cm^2/Vs, respectively, both of which get strongly reduced by oxygen-relatedsurface adsorbates from the ambient air. Our transport measurements furtherdemonstrate a systematic reduction of the SEAL by doping In2O3 with the deepcompensating bulk acceptors Ni or Mg. This finding is supported by X-rayphotoelectron spectroscopy measurements of the surface band bending and SEALelectron emission. Quantitative analyses of these XPS results usingself-consistent, coupled Schroedinger-Poisson calculations indicate thesimultaneous formation of compensating bulk donor defects (likely oxygenvacancies) which almost completely compensate the bulk acceptors. Finally, anenhancement of the thermopower by reduced dimensionality is demonstrated inIn2O3: Seebeck coefficient measurements of the surface 2DEG with partiallyreduced sheet electron concentrations between 3E12 and 7E12 cm^-2(corresponding average volume electron concentration between 1E19 and 2E19cm^-3 indicate a value enhanced by 80% compared to that of bulk Sn-doped In2O3with comparable volume electron concentration.

physical review. b./physical review. b

The two-dimensional electron gas of the In2O3 surface: Enhanced  thermopower, electrical transport properties, and its reduction by adsorbates  or compensating acceptor doping