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We have experimentally and theoretically investigated the electron spintransport and spin distribution at room temperature in a Si two-dimensional(2D) inversion channel of back-gate-type spin metal-oxide-semiconductorfield-effect transistors (spin MOSFETs). The magnetoresistance ratio of thespin MOSFET with a channel length of 0.4$\mu$m was increased by a factor of 6from that in our previous paper [Phys. Rev. B 99, 165301 (2019)] by loweringthe parasitic resistances at the source/drain junctions withhighly-phosphorus-doped n+-Si regions and by increasing the lateral electricfield in the channel along the electron transport, called "spin drift". ClearHanle signals with some oscillation peaks were observed for the spin MOSFETwith a channel length of 10 $\mu$ m under the lateral electric field,indicating that the effective spin diffusion length is dramatically enhanced bythe spin drift. By taking into account the n+-Si regions and the spin drift inthe channel, one-dimensional analytic functions were derived for analyzing theeffect of the spin drift on the spin transport through the channel and thesefunctions were found to explain almost all the experimental results. From thecalculated spin current and spin distribution, it was revealed that almost allthe spins are unflipped during the spin-drift-assisted transport through the0.4-$\mu$m-long inversion channel, but the most part of the injected spins fromthe source electrode are relaxed in the n+-Si regions of both the source anddrain junctions. This means that the spin drift is useful and precise design ofthe device structure is essential to obtain a higher magnetoresistance ratio.Furthermore, we showed that the effective spin resistances that are introducedin this study are very helpful to understand how to improve themagnetoresistance ratio of spin MOSFETs for practical use.

physical review. b./physical review. b

Spin transport in Si-based spin metal-oxide-semiconductor field-effect  transistors: Spin drift effect in the inversion channel and spin relaxation  in the n+-Si source/drain regions