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While the electrical current manipulation of antiferromagnets (AFMs) has beendemonstrated, the extent of the studied AFM materials has been limited with fewsystematic experiments and a poor understanding. We compare the electricalcurrent switching of the exchange-bias field ($H_{ex}$) inAFM-Mn$_3A$N/ferromagnet-Co$_3$FeN bilayers. An applied pulse current canmanipulate $H_{ex}$ with respect to the current density and FM layermagnetization, which shifts exponentially as a function of the current density.We found that the saturation current density and exponential decay constant$\tau$ increase with the local moment of AFM Mn atoms. Our results highlightthe effect of the AFM local moment to electrical current switching of $H_{ex}$,although it has a near-zero net magnetization, and may provide a facile way toexplore the electrical current manipulation of AFM materials.

Scaling the electrical current switching of exchange bias in fully-epitaxial antiferromagnet/ferromagnet bilayers