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We investigate how to facilitate the injection of domain walls in chiralferromagnetic nanowires by electrical means. We calculate the critical currentdensity above which domain walls are injected into the nanowire depending onthe material parameters and the source of interaction including spin-transfertorques as well as spin-orbit torques. We demonstrate that theDzyaloshinskii-Moriya interaction can significantly reduce the requiredcritical current to inject the types of domain walls favored by theDzyaloshinskii-Moriya interaction. We find that in chiral magnets it is onlypossible to shed a single domain wall by means of spin-orbit torques, as theymodify the ground state orientation of the system. In contrast, forspin-transfer-torque induced shedding of domain walls, we show that there existtwo different critical current densities for the two different domain wallchiralities, respectively.  Additionally, for the consecutive creation of domain walls by means ofspin-transfer torques, we find that the interaction between the domain wallscannot be neglected and even may lead to the pairwise annihilation ofconsecutive domain walls with opposite chiralities.

Facilitating domain wall injection in magnetic nanowires by electrical means