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Electrical manipulation of magnetization is essential for integration ofmagnetic functionalities such as magnetic memories and magnetic logic devicesinto electronic circuits. The current induced spin-orbit torque (SOT) in heavymetal/ferromagnet (HM/FM) bilayers via the spin Hall effect in the HM and/orthe Rashba effect at the interfaces provides an efficient way to switch themagnetization. In the meantime, current induced SOT has also been used toswitch the in-plane magnetization in single layers such as ferromagneticsemiconductor (Ga,Mn)As and antiferromagnetic metal CuMnAs with globally orlocally broken inversion symmetry. Here we demonstrate the current inducedperpendicular magnetization switching in L10 FePt single layer. The currentinduced spin-orbit effective fields in L10 FePt increase with the chemicalordering parameter (S). In 20 nm FePt films with high S, we observe a largecharge-to-spin conversion efficiency and a switching current density as low as7.0E6 A/cm2. We anticipate our findings may stimulate the exploration of thespin-orbit torques in bulk perpendicular magnetic anisotropic materials and theapplication of high-efficient perpendicular magnetization switching in singleFM layer.

Electrical switching of perpendicular magnetization in L10 FePt single layer