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Controlling magnetism and spin structures in strongly correlated systems byusing electric field is of fundamental importance but challenging. Here, ahigh-spin ruthenate phase is achieved via a solid ionic chemical junction atSrRuO3/SrTiO3 interface with distinct formation energies and diffusion barriersof oxygen vacancies, analogue to electronic band alignment in semiconductorheterojunction. Oxygen vacancies trapped within this interfacial SrRuO3reconstruct Ru-4d electronic structure and orbital occupancy, leading to anenhanced magnetic moment. Furthermore, an interfacial magnetic phase can beswitched reversibly by electric-field-rectifying oxygen migration in asolid-state ionic gating device, providing a framework for atomic design offunctionalities in strongly correlated oxides using a way of solid chemistry.

Electric-field-controllable high-spin SrRuO3 driven by a solid ionic junction