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Tellurium (Te) has attracted great research interest due to its uniquecrystal structure since 1970s. However, the conduction band of Te is rarelystudied experimentally because of the intrinsic p-type nature of Te crystal. Byatomic layer deposited dielectric doping technique, we are able to access theconduction band transport properties of Te in a controlled fashion. In thispaper, we report on a systematic study of weak-antilocalization (WAL) effect inn-type two-dimensional (2D) Te films. We find that the WAL agrees well withIordanskii, Lyanda-Geller, and Pikus (ILP) theory. The gate and temperaturedependent WAL reveals that Dyakonov-Perel (DP) mechanism is dominant for spinrelaxation and phase relaxation is governed by electron-electron (e-e)interaction. Large phase coherence length near 600nm at T=1K is obtained,together with gate tunable spin-orbit interaction (SOI). Transition fromweak-localization (WL) to weak-antilocalization (WAL) depending on gate bias isalso observed. These results demonstrate that newly developed solution-basedsynthesized Te films provide a new controllable strong SOI 2D semiconductorwith high potential for spintronic applications.

Gate-tunable Strong Spin-orbit Interaction in Two-dimensional Tellurium Probed by Weak-antilocalization