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Atomically thin MoS2 layer is a direct bandgap semiconductor exhibitingstrong electron-hole interaction due to the extreme quantum confinement andreduced screening of Coulomb interactions, which results in the formation ofstable excitons at room temperature. Therefore, various excitonic properties ofMoS2 monolayer are extremely important in determining the strength of lightmatter interactions including their radiative recombination lifetime andoptoelectronic response. In this paper, we report a comprehensive study of theunderlying annihilation mechanism of various types of exciton in MoS2 monolayerusing the transient absorption spectroscopy. We rigorously demonstrate that theF\"orster-type resonance energy transfer is the main annihilation mechanism ofA- and B-excitons while multistep diffusion process is responsible forC-exciton annihilation, which is supported by critical scientific evidence.

Annihilation mechanism of excitons in a MoS2 monolayer through direct F\"orster-type energy transfer and multistep diffusion