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Due to their band-structure and optical properties, InAs/InP quantum dots(QDs) constitute a promising system for single-photon generation at thirdtelecom window of silica fibers and for applications in quantum communicationnetworks. However, obtaining the necessary low in-plane density of emittersremains a challenge. Such structures are also still less explored than theirInAs/GaAs counterparts regarding optical properties of confined carriers. Here,we report on the growth via metal-organic vapor phase epitaxy and investigationof low-density InAs/InP QD-like structures, emitting in the range of 1.2-1.7${\mu}$m, which includes the S, C, and L bands of the third optical window. Weobserve multiple photoluminescence (PL) peaks originating from flat QDs withheight of small integer numbers of material monolayers. Temperature-dependentPL reveals redistribution of carriers between families of QDs. Viatime-resolved PL, we obtain radiative lifetimes nearly independent of emissionenergy in contrast to previous reports on InAs/InP QDs, which we attribute tostrongly height-dependent electron-hole correlations. Additionally, we observeneutral and charged exciton emission from spatially isolated emitters. Usingthe 8-band k${\cdot}$p model and configuration-interaction method, wesuccessfully reproduce energies of emission lines, the dispersion of excitonlifetimes, carrier activation energies, as well as the biexciton bindingenergy, which allows for a detailed and comprehensive analysis of theunderlying physics.

Optical and electronic properties of low-density InAs/InP quantum dot-like structures devoted to single-photon emitters at telecom wavelengths