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An inverse spin Hall effect (ISHE) in n-type silicon was observedexperimentally when conduction electrons were scattered on the spin-orbitpotential of bismuth. The spin current in the silicon layer was generated byexcitation of the magnetization precession during ferromagnetic resonance in athin permalloy (Py) layer deposited on a Si layer doped by phosphor andbismuth. From the angular dependences of the dc voltage for differentPy/n-Si:Bi structures aligned along the [011] or [100] crystal axes, we wereable to distinguish the planar Hall effect (PHE) and ISHE contributions. TheISHE dc voltage signal was proportional to sin{\theta}*sin2{\theta} product forthe structure aligned to the [011] crystal axis and to sin{\theta}*cos2{\theta}for the [100] direction. In addition, the PHE dc voltage was observed for theangles corresponded to the sin2{\theta} dependence. It means that for siliconas a many-valley semiconductor, the scattering of spins due to the spin-orbitpotential induced by shallow donor in n-type material is dependent on theorientation of the valley axes relative to the direction of the magnetic field.

Study of the spin-pump-induced inverse spin-Hall effect in Bi doped n-type Si