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We report the first experimental observation of a doubly-charged defect indiamond, SiV2-, in silicon and nitrogen co-doped samples. We measurespectroscopic signatures we attribute to substitutional silicon in diamond, andidentify a silicon-vacancy complex decorated with a nearest-neighbor nitrogen,SiVN, supported by theoretical calculations. Samples containing silicon andnitrogen are shown to be heavily photochromic, with the dominant visiblechanges due to the loss of SiV0/- and gain in the optically-inactive SiV2-.

Doubly-charged silicon vacancy center, photochromism, and Si-N complexes in co-doped diamond