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Room temperature optically detected magnetic resonance experiments on spin3/2 Silicon vacancies in 4H-SiC are reported. The $m_s=+1/2\leftrightarrow-1/2$ transition is accessed using a two microwave frequency excitationprotocol. The ratio of the Rabi frequencies of the $+3/2 \leftrightarrow +1/2$and $+1/2\leftrightarrow -1/2$ transitions is measured to be $(0.901\pm0.013)$. The deviation from $\sqrt{3}/2$ is attributed to small difference ing-factor for different magnetic dipole transitions. Whereas a spin-1/2 systemis characterized by a single spin lifetime $T_1$, we experimentally demonstratethat the spin 3/2 system has three distinct relaxation modes that can bepreferentially excited and detected. The measured relaxation times are$(0.41\pm 0.02) T_{slow}=T_d= (3.3\pm 0.5)T_{fast} $. This differs from thevalues of $ T_p/3 =T_d= 2T_f $ expected for pure dipole ($T_p$), quadrupole($T_d$), and octupole ($T_f$) relaxation modes, respectively, and impliesadmixing of the slow dipole and fast octupole relaxation modes.

Relaxation dynamics of spin 3/2 silicon vacancies in 4H-Silicon carbide