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The discovery of quantum Hall effect in two-dimensional (2D) electronicsystems inspired the topological classifications of electronic systems1,2. Bystacking 2D quantum Hall effects with interlayer coupling much weaker than theLandau level spacing, quasi-2D quantum Hall effects have been experimentallyobserved3~7, due to the similar physical origin of the 2D counterpart.Recently, in a real 3D electronic gas system where the interlayer coupling ismuch stronger than the Landau level spacing, 3D quantum Hall effect has beenobserved in ZrTe58. In this Letter, we report the electronic transport featuresof its sister bulk material, i.e., HfTe5, under external magnetic field. Weobserve a series of plateaus in Hall resistance \r{ho}xy as magnetic fieldincreases until it reaches the quantum limit at 1~2 Tesla. At the plateauregions, the longitudinal resistance \r{ho}xx exhibits local minima. Although\r{ho}xx is still nonzero, its value becomes much smaller than \r{ho}xy at thelast few plateaus. By mapping the Fermi surface via measuring the Shubonikov-deHaas oscillation, we find that the strength of Hall plateau is proportional tothe Fermi wavelength, suggesting that its formation may be attributed to thegap opening from the interaction driven Fermi surface instability. By comparingthe bulk band structures of ZrTe5 and HfTe5, we find that there exists an extrapocket near the Fermi level of HfTe5, which may lead to the finite but nonzerolongitudinal conductance.

Approaching Three-Dimensional Quantum Hall effect in Bulk HfTe5