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We investigate topological phases of bilayer graphene subject toantiferromagnetic exchange field, interlayer bias, and irradiated by light. Wediscover that at finite bias and light intensity the system transitions into apreviously unknown spin-valley polarized quantum anomalous Hall (SVP-QAH)insulator state, for which the subsystem of one spin is a valley Halltopological insulator (TI) and that of the other spin is a QAH insulator. Weassess the TI phases occurring in the system by analytically calculating thespin-valley dependent Chern number, and characterize them by considering edgestates in a nanoribbon. We demonstrate that the SVP-QAH edge states lead to aunique spin rectification effect in a domain wall. Along the phase boundary, weobserve a bulk half-metal state with Berry's phase of 2\pi.

Spin-Valley Polarized Quantum Anomalous Hall Effect and a Valley-Controlled Half Metal in Bilayer Graphene