English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In this paper, we investigate the impact of gating potential and magneticfield on phonon induced spin relaxation rate and the speed of the electricallydriven single-qubit operations inside the InSb nanowire spin qubit. We showthat a strong $g$ factor and high magnetic field strength lead to theprevailing influence of electron-phonon scattering due to deformationpotential, considered irrelevant for materials with a weak $g$ factor, likeGaAs or Si/SiGe. In this regime, we find that spin relaxation between qubitstates is significantly suppressed due to the confinement perpendicular to thenanowire axis. We also find that maximization of the number of single-qubitoperations that can be performed during the lifetime of the spin qubit requiressingle quantum dot gating potential.

Electrical control of a spin qubit in InSb nanowire quantum dots: strongly suppressed spin relaxation in high magnetic field