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Perovskite oxides ABO$_3$ containing heavy B-site elements are a class ofcandidate materials to host topological metals with a large spin-orbitinteraction. In contrast to the band insulator BaSnO$_3$, the semimetalBaPbO$_3$ is proposed to be a typical example with an inverted band structure,the conduction band of which is composed of mainly the O-2p orbital. In thisstudy, we exemplify a band-gap modification by systematic structural, optical,and transport measurements in BaSn$_{1-x}$Pb$_x$O$_3$ films. A suddensuppression of the conductivity and an enhancement of the weak antilocalizationeffect at $x$ = 0.9 indicate the presence of a singular point in the electronicstructure as a signature of the band inversion. Our findings provide anintriguing platform for combining topological aspects and electron correlationin perovskite oxides based on band-gap engineering.

Signature of band inversion in the perovskite thin-film alloys BaSn$_{1-x}$Pb$_x$O$_3$