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We present a study of the structural and electronic properties ofultra-nanocrystalline diamond films that were modified by adding nitrogen tothe gas mixture during chemical vapour deposition growth. Hall bar devices werefabricated from the resulting films to investigate their electrical conductionas a function of both temperature and magnetic field. Through low-temperaturemagnetoresistance measurements, we present strong evidence that the dominantconduction mechanism in these films can be explained by a combination of 3Dweak localization (3DWL) and thermally activated hopping at highertemperatures. An anisotropic 3DWL model is then applied to extract thephase-coherence time as function of temperature, which shows evidence of apower law dependence in good agreement with theory.

Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions