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We present a theoretical investigation of the yet unexplored dynamics of theproduced excited carriers upon irradiation of hexagonal Silicon Carbide(6H-SiC) with femtosecond laser pulses. To describe the ultrafast behaviour oflaser induced out-of-equilibrium carriers, a real time simulation based onDensity Functional Theory (DFT) methodology is used to compute both the hotcarrier dynamics and transient change of the optical properties. ATwo-Temperature model (TTM) is also employed to derive the relaxation processesfor laser pulses of wavelength 401 nm, duration 50 fs at normal incidenceirradiation which indicate that surface damage on the material occurs forfluence ~1.88 Jcm-2. This approach of linking, for the first time, real timecalculations, transient optical properties and TTM modelling, has strongimplications for understanding both the ultrafast dynamics and relaxationprocesses and providing a precise investigation of the impact of hot carrierpopulation in surface damage mechanisms in solids.

physical review. b./physical review. b

Modelling ultrafast non-equilibrium carrier dynamics and relaxation  processes upon irradiation of hexagonal Silicon-Carbide with femtosecond  laser pulses