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The ZrSiS-type compounds are Dirac semimetals and have been attractingconsiderable interest in recent years due to their topological electronicproperties and possible applications. In particular, gapped Dirac nodes canpossess large spin Berry curvatures and thus give rise to large spin Halleffect (SHE) and spin Nernst effect (SNE), which may be used to generate purespin current for spintronics and spin caloritronics without applied magneticfield or magnetic material. In this paper we study both SHE and SNE in ZrXY (X= Si, Ge; Y = S, Se, Te) based on \textit{ab initio} relativistic bandstructure calculations. Our theoretical calculations reveal that some of thesecompounds exhibit large intrinsic spin Hall conductivity (SHC) and spin Nernstconductivity (SNC). The calculated SHC of ZrSiTe is as large as -755($\hbar$/e)(S/cm). Since the electric conductivity of these Dirac semimetalsare much smaller than that of platinum which has the largest intrinsic SHC of$\sim$2200 ($\hbar$/e)(S/cm), this indicates that they will have a larger spinHall angle than that of platinum. Remarkably, we find that both the magnitudeand sign of the SHE and SNE in these compounds can be significantly tuned bychanging either the electric field direction or spin current direction and mayalso be optimized by slightly varying the Fermi level via chemical doping.Analysis of the calculated band- and $k$-resolved spin Berry curvatures showthat the large SHE and SNE as well as their remarkable tunabilities originatefrom the presence of many slightly spin-orbit coupling-gapped Dirac nodal linesnear the Fermi level in these Dirac semimetals. Our findings suggest that theZrSiS-type compounds are promising candidates for spintronic and spincaloritronic devices, and will certainly stimulate further experiments on theseDirac semimetals.

Tunable large spin Hall and spin Nernst effects in Dirac semimetals ZrXY (X=Si, Ge; Y=S, Se, Te)