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We compute the shift current bulk photovoltaic effect (BPVE) in bulkBaTiO$_3$ and two-dimensional monochalcogenide SnSe considering quasi-particlecorrections and exciton effects. We explore changes in shift current peakposition and magnitude reduction due to band renormalization. For BaTiO$_3$, wedemonstrate that shift current is reduced near the band edge due to excitoneffects. Comparison of these results with experiments on BaTiO$_3$ indicatethat mechanisms other than shift current may be contributing to BPVE.Additionally, we reveal that the shift current near the band gap shows only asmall change due to excitons in two-dimensional SnSe, suggesting that the thinfilm geometry provides a feasible way to reduce the exciton effect on the shiftcurrent. These results suggest that many-body corrections are important foraccurate assessments of bulk photovoltaic materials and to understand themechanisms behind the BPVE

Shift current bulk photovoltaic effect influenced by quasiparticles and excitons