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We present here results of atomistic theory of electrons confined by metallicgates in a single layer of transition metal dichalcogenides. The electronicstates are described by the tight-binding model and computed using acomputational box including up to million atoms with periodic boundaryconditions and parabolic confining potential due to external gates embedded init. With this methodology applied to MoS2, we find a twofold degenerate energyspectrum of electrons confined in the two non-equivalent K-valleys by themetallic gates as well as six-fold degenerate spectrum associated withQ-valleys. We compare the electron spectrum with the energy levels of electronsconfined in GaAs/GaAlAs and in self-assembled quantum dots. We discuss the roleof spin splitting and topological moments on the K and Q valley electronicstates in quantum dots with sizes comparable to experiment.

physical review. b./physical review. b

The effect of valley, spin and band nesting on the electronic properties  of gated quantum dots in a single layer of transition metal dichalcogenides  (TMDCs)