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We have deposited polycrystalline Re doped $(Fe_{65}Co_{35})_{100-x}Re_{x}$(0 $\leq$ x $\leq$ 12.6 at\%) thin films grown under identical conditions andsandwiched between thin layers of Ru in order to study the phenomenon of spinpumping as a function of Re concentration. In-plane and out-of-planeferromagnetic resonance spectroscopy results show an enhancement of the Gilbertdamping with an increase in Re doping. We found evidence of an increase in thereal part of effective spin mixing conductance[Re($g^{\uparrow\downarrow}_{eff}$)] with the increase in Re doping of 6.6at\%, while a decrease is evident at higher Re doping. The increase inRe($g^{\uparrow\downarrow}_{eff}$) can be linked to the Re doping inducedchange of the interface electronic structure in the non-magnetic Ru layer andthe effect interfacial spin-orbit coupling has on the effective spin-mixingconductance. The lowest and highest values ofRe($g^{\uparrow\downarrow}_{eff}$) are found to be 9.883(02) $nm^{-2}$ and19.697(02) $nm^{-2}$ for 0 at\% and 6.6 at\% Re doping, respectively. Thesaturation magnetization decreases with increasing Re doping, from 2.362(13) Tfor the undoped film to 1.740(03) T for 12.6 at\% Re doping. This study opens anew direction of tuning the spin-mixing conductance in magneticheterostructures by doping of the ferromagnetic layerr, which is essential forthe realization of energy efficient operation of spintronic devices.

Engineering of spin mixing conductance in Ru/FeCo/Ru interfaces: Effect of Re Doping