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Insulator to metal (IMT) transition (T$_t$ $\sim$ 341 K) in the VO2accompanies transition from an infrared (IR) transparent to IR opaque phase.Tailoring of the IMT and associated IR switching behavior can offer potentialthermochromic applications. Here we report on effects of the W and the Tbdoping on the IMT and associated structural, electronic structure and opticalproperties of the VO2 thin film. Our results show that the W dopingsignificantly lowers IMT temperature ($\sim$ 292 K to $\sim$ 247 K for 1.3\% Wto 3.7\% W) by stabilizing the metallic rutile, $\it{R}$, phase while Tb dopingdoes not alter the IMT temperature much and retains the insulating monoclinic,$\it{M1}$, phase at room temperature. It is observed that the W doping albeitsignificantly reduces the IR switching temperature but is detrimental to thesolar modulation ability, contrary to the Tb doping effects where higher IRswitching temperature and solar modulation ability is observed. The IMTbehavior, electrical conductivity and IR switching behavior in the W and the Tbdoped thin films are found to be directly associated with the spectral changesin the V 3$\it{d_{\|}}$ states.

Role of the V-V dimerization in insulator-metal transition and optical transmittance of pure and doped VO2 thin films