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Surface acoustic waves (SAWs) have been used to transport single electronsacross long distances of several hundreds of microns. They can potentially beinstrumental in the implementation of scalable quantum processors and quantumrepeaters, by facilitating interaction between distant qubits. While most ofthe work thus far has focused on SAW devices in doped GaAs/AlGaAsheterostructures, we have developed a method of creating lateral p-n junctionsin an undoped heterostructure containing a quantum well, with the expectedadvantages of having reduced charge noise and increased spin-coherencelifetimes due to the lack of dopant scattering centres. We present experimentalobservations of SAW-driven single-electron quantised current in an undopedGaAs/AlGaAs heterostructure, where single electrons were transported betweenregions of induced electrons. We also demonstrate pumping of electrons by a SAWacross the sub-micron depleted channel between regions of electrons and holes,and observe light emission at such a lateral p-n junction. Improving thelateral confinement in the junction should make it possible to produce aquantised electron-to-hole current and hence SAW-driven emission of singlephotons.

Quantised Charge Transport driven by a Surface Acoustic Wave in induced unipolar and bipolar junctions