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We report on the electronic structure of $\alpha$-Sn films in the very lowthickness regime grown on InSb(111)A. High-resolution low photon energiesangle-resolved photoemission (ARPES) allows for the direct observation of thelinearly dispersing 2D topological surface states (TSSs) that exist between thesecond valence band and the conduction band. The Dirac point of this TSS wasfound to be 200meV below the Fermi level in 10-nm-thick $\alpha$-Sn films,which enables the observation of the hybridization gap opening at the Diracpoint of the TSS for thinner films. The crossover to a quasi-2D electronicstructure is accompanied by a full gap opening at the Brillouin zone center, inagreement with our density functional theory calculations. We further identifythe thickness regime of $\alpha$-Sn films where the hybridization gap in TSScoexists with the topologically non-trivial electronic structure and one canexpect the presence of a 1D helical edge states.

Tailoring the topological surface state in ultrathin $\alpha$-Sn (111) films