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Electron-phonon interaction (EPI) is presumably detrimental forthermoelectric performance in semiconductors because it limits carriermobility. Here we show that enhanced EPI with strong energy dependence offersan intrinsic pathway to significant increase in the Seebeck coefficient and thethermoelectric power factor, particularly in the context of two-dimensional(2D) graphene-like Dirac bands. The increase is realized by enabling electronenergy filtering through preferential scattering of electron/hole carriers. Weprove this concept by implementing state-of-the-art first-principlescomputational methods with explicit treatment of EPI for a 2D gapless MoS$_{2}$allotrope, which has both massless Dirac bands and a heavy-fermion state thatacts as the filter. We determine that the optimal location of the heavy stateand hence the onset of the filtering process is at the Dirac point. Our studyopens a new avenue for attaining ultrahigh power factors via engineering theEPI in graphene-like semimetals or identifying new compounds that intrinsicallypossess the featured electronic structure.

Leveraging Electron-Phonon Interaction to Enhance Thermoelectric Power Factor in Graphene-Like Semimetals