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To enable functional skyrmion based spintronic devices, the controllablegeneration and manipulation of skyrmions is essential. While the generation ofskyrmions by using a magnetic geometrical constriction has already beendemonstrated, this approach is difficult to combine with a subsequentcontrolled manipulation of skyrmions. The high efficiency of skyrmiongeneration from magnetic constrictions limits the useful current density,resulting in stochastic skyrmion motion, which may obscure topologicalphenomena such as the skyrmion Hall effect. In order to address this issue, wedesigned a nonmagnetic conducting Ti/Au point contact in devices made ofTa/CoFeB/TaOx trilayer films. By applying high voltage pulses, weexperimentally demonstrated that skyrmions can be dynamically generated.Moreover, the accompanied spin topology dependent skyrmion dynamics, theskyrmion Hall effect is also experimentally observed in the same devices. Thecreation process has been numerically reproduced through micromagneticsimulations in which the important role of skyrmion-antiskyrmion pairgeneration is identified. The motion and Hall effect of the skyrmions,immediately after their creation is described using a modified Thiele equationafter taking into account the contribution from spatially inhomogeneousspin-orbit torques and the Magnus force. The simultaneous generation andmanipulation of skyrmions using a nonmagnetic point contact could provide auseful pathway for designing novel skyrmion based devices.

Generation and Hall effect of skyrmions enabled via using nonmagnetic point contacts