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Manipulation of Rashba effects in two-dimensional (2D) electron systems ishighly desirable for controllable applications in spintronics andoptoelectronics. Here, by combining first-principles investigation and modelanalysis, we use uniaxial stress to control BiTeI monolayer as a Rashba 2Dsemiconductor for useful spin and transport properties. We find that thestress-driven electron system can be described by an effective anisotropicRashba model including all the three Pauli matrixes, and uniaxial stress allowsan out-of-plane spin component. When appropriate electron carriers areintroduced into the monolayer, an in-plane electric field can induce a chargecurrent and three spin current components (including that based on theout-of-plane spin) because of the reduced symmetry. Therefore, uniaxial stresscan be used to control such Rashba 2D electron systems as the BiTeI monolayerfor seeking promising devices.

Uniaxial stress controlled anisotropic Rashba effects and carriers-based currents in BiTeI monolayer semiconductor