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We report on high-pressure $p \leq 45$ GPa resistivity measurements on theperovskite-related mixed-valent compound CsAuBr$_3$. The compoundshigh-pressure resistivity can be classified into three regions: For lowpressures ($p < 10$ GPa) an insulator to metal transition is observed; between$p= 10$ GPa and 14 GPa the room temperature resistivity goes through a minimumand increases again; above $p = 14$ GPa a semiconducting state is observed.From this pressure up to the highest pressure of $p = 45$ GPa reached in thisexperiment, the room-temperature resistivity remains nearly constant. We findan extremely large resistivity reduction between ambient pressure and 10 GPa bymore than 6 orders of magnitude. This decrease is among the largest reportedchanges in the resistivity for this narrow pressure regime. We show - by ananalysis of the electronic band structure evolution of this material - that thelarge change in resistivity under pressure in not caused by a crossing of thebands at the Fermi level. We find that it instead stems from two bands that arepinned at the Fermi level and that are moving towards one another as aconsequence of the mixed-valent to single-valent transition. This mechanismappears to be especially effective for the rapid buildup of the density ofstates at the Fermi level.

Large Resistivity Reduction in Mixed-Valent CsAuBr$_3$ Under Pressure