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Perpendicular magnetic anisotropy (PMA) in ultrathin magnetic structures is akey ingredient for the development of electrically controlled spintronicdevices. Due to their relatively large spin-polarization, high Curietemperature and low Gilbert damping the Co-based full Heusler alloys are ofspecial importance from a scientific and applications point of view. Here, westudy the mechanisms responsible for the PMA in Pt/Co-based full Heusleralloy/MgO thin films structures. We show that the ultrathin Heusler filmsexhibit strong PMA even in the absence of magnetic annealing. By means offerromagnetic resonance experiments, we demonstrate that the effectivemagnetization shows a two-regime behavior depending on the thickness of theHeusler layers. Using Auger spectroscopy measurements, we evidenceinterdiffusion at the underlayer/Heusler interface and the formation of aninterfacial CoFe-rich layer which causes the two-regime behavior. In the caseof the ultrathin films, the interfacial CoFe-rich layer promotes the strong PMAthrough the electronic hybridization of the metal alloy and oxygen orbitalsacross the ferromagnet/MgO interface. In addition, the interfacial CoFe-richlayer it is also generating an increase of the Gilbert damping for theultrathin films beyond the spin-pumping effect. Our results illustrate that thestrong PMA is not an intrinsic property of the Heusler/MgO interface but it isactively influenced by the interdiffusion, which can be tuned by a properchoice of the underlayer material, as we show for the case of the Pt, Ta and Crunderlayers.

Perpendicular magnetic anisotropy in Pt/Co-based full Heusler alloy/MgO thin films structures