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Hereby, we present a comprehensive experimental and theoretical study of theelectronic structure and optical properties of excitonic complexes instrain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organicchemical vapour deposition and emitting at the 1300 nm telecommunicationwindow. Single QD properties have been determined experimentally for a numberof nanostructures by means of excitation-power-dependent andpolarization-resolved microphotoluminescence and further compared with theresults of confined states calculations employing the 8-band kp theory combinedwith the configuration interaction method. The origin of excitonic complexeshas been exemplarily confirmed based on magnetooptical and correlationspectroscopy study. Understanding the influence of structural parameters andcompositions (of QDs themselves as well as in the neighbouring strain reducinglayer) allows to distinguish which of them are crucial to control the emissionwavelength to achieve the telecommunication spectral range or to affect bindingenergies of the fundamental excitonic complexes. The obtained results providedeeper knowledge on control and on limitations of the investigated structuresin terms of good spectral isolation of individual optical transitions and thespatial confinement that are crucial in view of QD applications insingle-photon sources of high purity at telecom wavelengths.

Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths