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In this work we have studied the effect of light and electric field on theelectrical properties of La0.7Sr0.3MnO3 (LSMO) film at 300 K. Taking advantageof it's charge, spin, orbital and lattice degrees of freedom, we havesuccessfully shown that light and electric field together can be used to tunethe resistance states of the manganite system. Using applied gate voltage (Vg)and light we were able to obtain a change in resistance of about +/-7.5%.Furthermore, incorporating an ultra thin interfacial LaTiO3 (LTO) layerprovides valuable insight on the origin of the photoinduced effect. Theobserved photoinduced effect is attributed to photoexcited down spin egelectrons, interfacial charge injection and manipulation of orbital occupancydepending on the gate voltage and wavelength of light.

Electric field control of photoinduced effect in La$_{0.7}$Sr$_{0.3}$MnO$_3$/LaTiO$_3$/SrTiO$_3$ heterostructure