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We report electrical transport measurements on CaMn$_{2}$Bi$_{2}$ singlecrystals under applied pressure. At ambient pressure and high temperatures,CaMn$_{2}$Bi$_{2}$ behaves as a single-band semimetal hosting N\'{e}el order at$T_{N}=150$~K. At low temperatures, multi-band behavior emerges along with anactivated behavior typical of degenerate semiconductors. The activation gap isestimated to be $\Delta \sim 20$~K. Applied pressure not only favors theantiferromagnetic order at a rate of 0.40(2)~K/kbar, but also enhances theactivation gap at $20$~kbar by about $70$~\%. This gap enhancement is typicalof correlated narrow-gap semiconductors such as FeSi andCe$_{3}$Bi$_{4}$Pt$_{3}$, and places CaMn$_{2}$Bi$_{2}$ as a Mn-basedhybridization-gap semiconductor candidate. \textit{Ab initio} calculationsbased on the density functional theory are shown to be insufficient to describethe ground state of CaMn$_{2}$Bi$_{2}$.

Putative hybridization gap in CaMn$_{2}$Bi$_{2}$ under applied pressure