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We survey the electrical transport properties of the single-crystalline,topological chiral semimetal CoSi which was grown via different methods.High-quality CoSi single crystals were found in the growth from telluriumsolution. The sample's high carrier mobility enables us to observe, for thefirst time, quantum oscillations (QOs) in its thermoelectrical signals. Ouranalysis of QOs reveals two spherical Fermi surfaces around the R point in theBrillouin zone corner. The extracted Berry phases of these electron orbits areconsistent with the -2 chiral charge as reported in DFT calculations. Detailedanalysis on the QOs reveals that the spin-orbit coupling induced band-splittingis less than 2 meV near the Fermi level, one order of magnitude smaller thanour DFT calculation result. We also report the phonon-drag induced large Nernsteffect in CoSi at intermediate temperatures.

Crystal growth and quantum oscillations in the topological chiral semimetal CoSi