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We study theoretically the phonon-induced relaxation and decoherenceprocesses in the hybrid qubit in silicon. Hybrid qubit behaves as a chargequbit when the detuning is close to zero and as spin qubit for large detuningvalues. It is realized starting from an electrostatically defined doublequantum dot where three electrons are confined and manipulated through onlyelectrical tuning. By employing a three-level effective model for the qubit anddescribing the environment bath as a series of harmonic oscillators in thethermal equilibrium states, we extract the relaxation and decoherence times asa function of the bath spectral density and of the bath temperature using theBloch-Redfield theory. For Si quantum dots the energy dispersion is stronglyaffected by the physics of the valley, i.e. the conduction band minima, so wealso included the contribution of the valley excitations in our analysis. Ourresults offer fundamental information on the system decoherence properties whenthe unavoidable interaction with the environment is included and temperatureeffects are considered.

Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots