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Quantum computers require interfaces with classical electronics for efficientqubit control, measurement and fast data processing. Fabricating the qubit andthe classical control layer using the same technology is appealing because itwill facilitate the integration process, improving feedback speeds and offerpotential solutions to wiring and layout challenges. Integrating classical andquantum devices monolithically, using complementary metal-oxide-transistor(CMOS) processes, enables the processor to profit from the most matureindustrial technology for the fabrication of large scale circuits. Here wedemonstrate the integration of a single-electron charge storage CMOS quantumdot with a CMOS transistor for control of the readout via gate-based dispersivesensing using a lumped element $LC$ resonator. The control field-effecttransistor (FET) and quantum dot are fabricated on the same chip usingfully-depleted silicon-on-insulator technology. We obtain a charge sensitivityof $\delta q=165\, \mu e \mathrm{Hz}^{-1/2}$ when the quantum dot readout isenabled by the control FET. Additionally, we observe a single-electronretention time of the order of a second when storing a single-electron chargeon the quantum dot at milli-Kelvin temperatures. These results demonstratefirst steps towards time-based multiplexing of gate-based dispersive qubitreadout in CMOS technology opening the path for the development of anall-silicon quantum-classical processor.

Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit